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BSL302SN Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSL302SN Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page BSL302SN Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 564 750 pF Output capacitance C oss - 202 269 Reverse transfer capacitance Crss -28 43 Turn-on delay time t d(on) - 6.4 - ns Rise time t r - 2.8 - Turn-off delay time t d(off) - 13.7 - Fall time t f - 1.9 - Gate Charge Characteristics Gate to source charge Q gs - 1.78 2.37 nC Gate to drain charge Q gd - 1.2 1.8 Gate charge total Q g - 4.4 6.6 Gate plateau voltage V plateau - 3.2 - V Reverse Diode Diode continous forward current I S - - 2.5 A Diode pulse current I S,pulse -- 28 Diode forward voltage V SD V GS=0 V, I F=7.1 A, T j=25 °C - 0.8 1.2 V Reverse recovery time t rr - 14.2 ns Reverse recovery charge Q rr - 5.1 - nC V R=15 V, I F=7.1 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=7.1 A, R G=1.6 Ω V DD=15 V, I D=7.1 A, V GS=0 to 5 V 1.06 page 3 2010-03-26 |
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