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BSL202SN Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSL202SN Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page BSL202SN Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 863 1147 pF Output capacitance C oss - 278 370 Reverse transfer capacitance Crss -40 60 Turn-on delay time t d(on) - 8.26 - ns Rise time t r - 27.5 - Turn-off delay time t d(off) - 18.9 - Fall time t f - 4.06 - Gate Charge Characteristics Gate to source charge Q gs - 1.82 2.42 nC Gate to drain charge Q gd - 1.1 1.6 Gate charge total Q g - 5.8 8.7 Gate plateau voltage V plateau -2 - V Reverse Diode Diode continous forward current I S -- 2 A Diode pulse current I S,pulse -- 30 Diode forward voltage V SD V GS=0 V, I F=7.5 A, T j=25 °C - 0.8 1.2 V Reverse recovery time t rr - 14.7 - ns Reverse recovery charge Q rr - 4.62 - nC V R=10 V, I F=7.5 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=7.5 A, R G=6 Ω V DD=10 V, I D=7.5 A, V GS=0 to 4.5 V Rev 1.07 page 3 2010-03-26 |
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