IPA60R520C6 datasheet(6/17 Pages) INFINEON

Part #	IPA60R520C6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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600V CoolMOS™ C6 Power Transistor

IPx60R520C6

Electrical characteristics

Final Data Sheet

6

Rev. 2.0, 2009-09-17

4

Electrical characteristics

Electrical characteristics, at

Tj=25 °C, unless otherwise specified.

Table 6

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

V

(BR)DSS

600

-

V

GS=0 V, ID=0.25 mA

Gate threshold voltage

V

GS(th)

2.5

3

3.5

V

DS=VGS, ID=0.23mA

Zero gate voltage drain current

I

DSS

--

1

µA

V

DS=600 V, VGS=0 V,

T

j=25 °C

-10

-

V

DS=600 V, VGS=0 V,

T

j=150 °C

Gate-source leakage current

I

GSS

-

100

nA

V

GS=20 V, VDS=0 V

Drain-source on-state resistance

R

DS(on)

-0.47

0.52



V

GS=10 V, ID=2.8 A,

T

j=25 °C

-1.22

-

V

GS=10 V, ID=2.8A,

T

j=150 °C

Gate resistance

R

G

-17.5

-



f=1 MHz, open drain

Table 7

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

C

iss

-512

-

pF

V

GS=0 V, VDS=100 V,

f=1 MHz

Output capacitance

C

oss

-35

-

Effective output capacitance,

energy related1)

1)

C

o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

C

o(er)

-23

-

V

GS=0 V,

V

DS=0...480 V

Effective output capacitance, time

related2)

2)

C

o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

C

o(tr)

-100

-

I

D=constant, VGS=0 V

V

DS=0...480V

Turn-on delay time

t

d(on)

-13

-

ns

V

DD=400 V,

V

GS=13 V, ID=3.5 A,

R

G=6.8 

(see table 20)

Rise time

t

r

-10

-

Turn-off delay time

t

d(off)

-85

-

Fall time

t

f

-14

-

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