BSC084P03NS3G datasheet(2/9 Pages) INFINEON

Part #	BSC084P03NS3G

Description	OptiMOS P3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC084P03NS3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - case

R thJC

-

1.8

K/W

Thermal resistance,

junction - ambient

R thJA

6 cm

2 cooling area2)

--

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250µA

-30

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-105 µA

-3.1

-2.5

-1.9

Zero gate voltage drain current

I DSS

V DS=-30 V, V GS=0 V,

T j=25 °C

-

-1

µA

V DS=-30 V, V GS=0 V,

T j=125 °C

-

-100

Gate-source leakage current

I GSS

V GS=-25 V, V DS=0 V

-

-100

nA

Drain-source on-state resistance

R DS(on)

V GS=-6 V, I D=-30 A

-

8.4

14.0

m

Ω

V GS=-10 V, I D=-50 A

-

6.1

8.4

Gate resistance

R G

-

2.2

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-50 A

33

66

-

S

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

3) See Fig. 3

Rev. 2.1

page 2

2009-11-16

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