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BSC084P03NS3G Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSC084P03NS3G Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page BSC084P03NS3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.8 K/W Thermal resistance, junction - ambient R thJA 6 cm 2 cooling area2) -- 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=-105 µA -3.1 -2.5 -1.9 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 µA V DS=-30 V, V GS=0 V, T j=125 °C - - -100 Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-6 V, I D=-30 A - 8.4 14.0 m Ω V GS=-10 V, I D=-50 A - 6.1 8.4 Gate resistance R G - 2.2 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-50 A 33 66 - S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 3) See Fig. 3 Rev. 2.1 page 2 2009-11-16 |
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