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ADS4146 Datasheet(PDF) 2 Page - Texas Instruments |
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ADS4146 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 82 page 12-Bit ADC OVR_SDOUT D10_D11_M D10_D11_P D8_D9_M D8_D9_P D6_D7_M D6_D7_P D4_D5_M D4_D5_P D2_D3_M D2_D3_P D0_D1_M D0_D1_P CLKOUTM CLKOUTP CLKM CLKP CLOCKGEN INM VCM INP Sampling Circuit Common DigitalFunctions DDR Serializer Low-LatencyMode (DefaultAfterReset) Reference Control Interface OE ADS4129 AVDD AGND DRVDD DRGND DDRLVDS Interface ADS4126 , ADS4129 ADS4146 , ADS4149 SBAS483F – NOVEMBER 2009 – REVISED OCTOBER 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. FUNCTIONAL BLOCK DIAGRAM Figure 1. ADS412x Block Diagram 2 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): ADS4126 ADS4129 ADS4146 ADS4149 |
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