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IPW60R125C6 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPW60R125C6 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 18 page 600V CoolMOS™ C6 Power Transistor IPx60R125C6 Electrical characteristics Final Data Sheet 7 Rev. 2.1, 2010-02-09 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Q gs -12 - nC V DD=480 V, I D=14.5 A, V GS=0 to 10 V Gate to drain charge Q gd -49 - Gate charge total Q g -96 - Gate plateau voltage V plateau -5.4 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode forward voltage V SD -0.9 - V V GS=0 V, IF=14.5 A, T j=25 °C Reverse recovery time t rr -510 - ns V R=400 V, IF=14.5 A, d i F/dt=100 A/µs (see table 22) Reverse recovery charge Q rr -10 - µC Peak reverse recovery current I rrm -39 - A |
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