SPN02N60C3_05 datasheet(1/11 Pages) INFINEON

Part #	SPN02N60C3

Description	New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPN02N60C3

CoolMOS

TM Power Transistor

Features

• New revolutionary high voltage technology

• Ultra low gate charge

• Ultra low effective capacitances

• Extreme dv /dt rated

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T A=25 °C

A

T A=70 °C

Pulsed drain current

1)

I D,pulse

T A=25 °C

Avalanche energy, single pulse

E AS

I D=0.9 A, V DD=50 V

50

mJ

Avalanche energy, repetitive t AR

1),2)

E AR

I D=1.8 A, V DD=50 V

Avalanche current, repetitive t AR

1)

I AR

A

Drain source voltage slope

dv /dt

I D=1.8 A, V DS=480 V,

T j=125 °C

V/ns

Gate source voltage

V GS

static

V

V GS

AC (f >1 Hz)

Power dissipation

P tot

T A=25 °C

W

Operating and storage temperature

T j, T stg

°C

±20

±30

1.8

-55 ... 150

0.07

1.8

50

Value

0.4

0.3

5.4

V DS @ T j,max

650

V

R DS(on),max

2.5

Ω

I D

0.4

A

Product Summary

Type

Package

Ordering Code

Marking

SPN02N60C3

SOT223

Q67040-S4553

02N60C3

SOT223

Rev. 2.

3

page 1

200

5-02-21

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