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IPP60R280C6 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IPP60R280C6
Description  Metal Oxide Semiconductor Field Effect Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP60R280C6 Datasheet(HTML) 4 Page - Infineon Technologies AG

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600V CoolMOS™ C6 Power Transistor
IPx60R280C6
Maximum ratings
Final Data Sheet
4
Rev. 2.1, 2010-02-09
2
Maximum ratings
at
T
j = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ. Max.
Continuous drain current1)
1) Limited by
T
j,max. Maximum duty cycle D=0.75
ID
--
13.8
A
TC= 25 °C
8.7
TC= 100°C
Pulsed drain current2)
2) Pulse width
t
p limited by Tj,max
ID,pulse
--
40
A
TC=25 °C
Avalanche energy, single pulse
EAS
--
284
mJ
ID=2.4 A,VDD=50 V
(see table 21)
Avalanche energy, repetitive
EAR
-
-
0.43
ID=2.4 A,VDD=50 V
Avalanche current, repetitive
IAR
--
2.4
A
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns VDS=0...480 V
Gate source voltage
VGS
-20
-
20
V
static
-30
30
AC (f>1 Hz)
Power dissipation for
TO-220, TO-247, TO-262, TO-263
Ptot
--
104
W
TC=25 °C
Power dissipation for
TO-220 FullPAK
Ptot
--
32
Operating and storage temperature Tj,Tstg
-55
-
150
°C
Mounting torque
TO-220, TO-247
-
-
60
Ncm M3 and M3.5 screws
Mounting torque
TO-220 FullPAK
50
M2.5 screws
Continuous diode forward current
IS
--
12
A
TC=25 °C
Diode pulse current2)
IS,pulse
--
40
A
TC=25 °C
Reverse diode dv/dt3)
3) Identical low side and high side switch with identical
R
G
dv/dt
-
-
15
V/ns VDS=0...400 V,ISD ID,
Tj=25 °C
Maximum diode commutation
speed3)
dif/dt
500
A/µs (see table 22)


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