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SPN04N60S5 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SPN04N60S5 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page 200 5-02-21 Rev. 2. 2 Page 1 SPN04N60S5 Cool MOS™ Power Transistor VDS 600 V RDS(on) 0.95 Ω ID 0.8 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SOT-223 VPS05163 1 2 3 4 Type Package Ordering Code SPN04N60S5 SOT-223 Q67040-S4211 Marking 04N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TA = 25 °C TA = 70 °C ID 0.8 0.65 A Pulsed drain current, tp limited by Tjmax TA = 25 °C ID puls 3 Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TA = 25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C |
Similar Part No. - SPN04N60S5_05 |
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Similar Description - SPN04N60S5_05 |
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