BSS138LT1D datasheet(2/5 Pages) ONSEMI

Part #	BSS138LT1D

Description	Power MOSFET 200 mA, 50 V

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BSS138LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

V(BR)DSS

50

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)

(VDS = 50 Vdc, VGS = 0 Vdc)

IDSS

−

0.1

0.5

mAdc

Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

±0.1

mAdc

ON CHARACTERISTICS (Note 1)

Gate−Source Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.5

−

1.5

Vdc

Static Drain−to−Source On−Resistance

(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)

(VGS = 5.0 Vdc, ID = 200 mAdc)

rDS(on)

−

5.6

−

10

3.5

W

Forward Transconductance

(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

gfs

100

−

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

Ciss

−

40

50

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

Coss

−

12

25

Transfer Capacitance

(VDG = 25 Vdc, VGS = 0, f = 1 MHz)

Crss

−

3.5

5.0

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 0.2 Adc,)

td(on)

−

20

ns

Turn−Off Delay Time

td(off)

−

20

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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