BCW30LT1G datasheet(4/7 Pages) ONSEMI

Part #	BCW30LT1G

Description	General Purpose Transistors

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BCW30LT1G

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4

TYPICAL STATIC CHARACTERISTICS

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

0.003

TJ = 125°C

- 55

°C

25

°C

VCE = 1.0 V

VCE = 10 V

Figure 7. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 8. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*

qVC for VCE(sat)

qVB for VBE

0.1

0.2

0.5

BCW29LT1

Figure 9. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.002

TA = 25°C

BCW29LT1

IC = 1.0 mA

10 mA

100 mA

Figure 10. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

TA = 25°C

PULSE WIDTH = 300

ms

DUTY CYCLE

≤ 2.0%

IB = 400 mA

350

mA

300

mA

250

mA

200

mA

*APPLIES for IC/IB ≤ hFE/2

25

°C to 125°C

-55

°C to 25°C

25

°C to 125°C

-55

°C to 25°C

140

160

0.005

0.01

0.02 0.03

0.05 0.07 0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0

10

20

30

50 70 100

0.005 0.01 0.02 0.05 0.1 0.2

0.5

1.0 2.0

5.0 10

20

5.0

10

15

20

25

30

35

40

1.2

1.0

0.8

0.6

0.4

0.2

0

2.4

0.8

0

1.6

0.8

1.0

2.0

5.0

10

20

50

100

0.1

0.2

0.5

300

200

180

150

mA

100

mA

50

mA

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