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BAS19LT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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BAS19LT3G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G http://onsemi.com 2 THERMAL CHARACTERISTICS (SOT−23) Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance Junction−to−Ambient (SOT−23) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SC−88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) PD 385 mW Thermal Resistance − Junction−to−Ambient Derate Above 25°C RqJA 328 3.0 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current (VR = 100 Vdc) BAS19 (VR = 150 Vdc) BAS20 (VR = 200 Vdc) BAS21 (VR = 100 Vdc, TJ = 150°C) BAS19 (VR = 150 Vdc, TJ = 150°C) BAS20 (VR = 200 Vdc, TJ = 150°C) BAS21 IR − − − − − − 0.1 0.1 0.1 100 100 100 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) BAS19 (IBR = 100 mAdc) BAS20 (IBR = 100 mAdc) BAS21 V(BR) 120 200 250 − − − Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF − − 1.0 1.25 Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns |
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