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MMBF170LT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBF170LT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MMBF170LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 60 - Vdc Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSS - 10 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) VGS(th) 0.8 3.0 Vdc Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) rDS(on) - 5.0 W On-State Drain Current (VDS = 25 Vdc, VGS = 0) ID(off) - 0.5 mA DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss - 60 pF SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 td(on) - 10 ns Turn-Off Delay Time td(off) - 10 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device Package Shipping† MMBF170LT1 SOT-23 (TO-236) 3,000 Tape & Reel MMBF170LT1G SOT-23 (TO-236) (Pb-Free) 3,000 Tape & Reel MMBF170LT3 SOT-23 (TO-236) 10,000 Tape & Reel MMBF170LT3G SOT-23 (TO-236) (Pb-Free) 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Figure 1. Switching Test Circuit Figure 2. Switching Waveform 20 dB 50 W ATTENUATOR PULSE GENERATOR 50 W 50 W 1 M W Vout 125 W +25 V 40 pF Vin TO SAMPLING SCOPE 50 W INPUT PULSE WIDTH 50% 90% 50% 10% 10% 90% 90% Vin OUTPUT INVERTED INPUT (Vin AMPLITUDE 10 VOLTS) Vout toff tf td(off) ton td(on) tr |
Similar Part No. - MMBF170LT1_08 |
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Similar Description - MMBF170LT1_08 |
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