MMBF170LT1_08 datasheet(2/5 Pages) ONSEMI

Part #	MMBF170LT1

Description	Power MOSFET 500 mA, 60 V N-Channel SOT-23

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBF170LT1

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA)

V(BR)DSS

60

-

Vdc

Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)

IGSS

-

10

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)

VGS(th)

0.8

3.0

Vdc

Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA)

rDS(on)

-

5.0

W

On-State Drain Current (VDS = 25 Vdc, VGS = 0)

ID(off)

-

0.5

mA

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)

Ciss

-

60

pF

SWITCHING CHARACTERISTICS (Note 1)

Turn-On Delay Time

(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)

Figure 1

td(on)

-

10

ns

Turn-Off Delay Time

td(off)

-

10

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

Package

Shipping†

MMBF170LT1

SOT-23 (TO-236)

3,000 Tape & Reel

MMBF170LT1G

SOT-23 (TO-236)

(Pb-Free)

3,000 Tape & Reel

MMBF170LT3

SOT-23 (TO-236)

10,000 Tape & Reel

MMBF170LT3G

SOT-23 (TO-236)

(Pb-Free)

10,000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Figure 1. Switching Test Circuit

Figure 2. Switching Waveform

20 dB 50

W

ATTENUATOR

PULSE

GENERATOR

50

W

50

W

1 M

W

Vout

125

W

+25 V

40 pF

Vin

TO SAMPLING

SCOPE

50

W INPUT

PULSE WIDTH

50%

90%

50%

10%

90%

Vin

OUTPUT

INVERTED

INPUT

(Vin AMPLITUDE 10 VOLTS)

Vout

toff

tf

td(off)

ton

td(on)

tr

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MMBF170LT1 Datasheet(PDF) 2 Page - ON Semiconductor

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