ESD33ST5G datasheet(2/4 Pages) ONSEMI

Part #	ESD33ST5G

Description	ESD Protection Diodes In Ultra Small SOD-723 Package

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Manufacturer	ONSEMI [ON Semiconductor]

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mESD3.3ST5G SERIES

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

Ppk

Peak Power Dissipation

C

Max. Capacitance @VR = 0 and f = 1 MHz

Uni-Directional TVS

IPP

IF

V

I

IR

IT

VRWM

VC VBR

VF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)

Device*

Device

Marking

VRWM (V)

IR (mA) @

VRWM

VBR (V) @ IT

(Note 2)

IT

VC (V)

@ Max IPP†

IPP (A)†

Ppk

(W)†

C (pF)

Max

Min

mA

Max

Typ

mESD3.3ST5G

E0

3.3

2.5

5.0

1.0

10.9

10.4

113

80

mESD5.0ST5G

E2

5.0

1.0

6.2

1.0

13.3

8.8

117

65

mESD12ST5G

E3

12

1.0

13.5

1.0

23.7

5.4

128

30

*Other voltages available upon request.

†Surge current waveform per Figure 1.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

Figure 1. 8 x 20

ms Pulse Waveform

100

90

80

70

60

50

40

30

20

10

0

020

40

60

80

t, TIME (

ms)

tP

tr

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8

ms

PEAK VALUE IRSM @ 8 ms

HALF VALUE IRSM/2 @ 20 ms

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