NJD35N04G_10 datasheet(2/4 Pages) ONSEMI

Part #	NJD35N04G

Description	NPN Darlington Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NJD35N04G

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mA, L = 10 mH)

VCEO(sus)

350

−

Vdc

Collector Cutoff Current (VCE = 500 V)

(IB = 0) (VCE = 500 V, TC = 125°C)

ICES

−

50

250

mAdc

Collector Cutoff Current (VCE = 350 V)

(IB = 0) (VCE = 300 V, TC = 125°C)

ICEO

−

50

250

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc)

IEBO

−

5.0

mAdc

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage

(IC = 2.0 A, IB = 20 mA)

(IC = 2.0 A, IB = 20 mA 125°C)

VCE(sat)

−

1.5

Vdc

Base−Emitter Saturation Voltage

(IC = 2.0 A, IB = 20 mA)

(IC = 2.0 A, IB = 20 mA 125°C)

VBE(sat)

−

2.0

Vdc

Base−Emitter On Voltage

(IC = 2.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V 125°C)

VBE(on)

−

2.0

Vdc

DC Current Gain

(IC = 2.0 A, VCE = 2.0 V)

(IC = 4.0 A, VCE = 2.0 Vdc)

hFE

2000

300

−

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 2.0 A, VCE = 10 V, f = 1.0 MHz)

fT

90

−

MHz

Output Capacitance

(VCB = 10 V, IE = 0, f = 0.1 MHz)

Cob

−

60

−

pF

SWITCHING CHARACTERISTICS

VCC = 12 V, Vclamp = 250 V, L = 4 mH

IC = 2 A, IB1 = 20 mA, IB2 = −20 mA

ts

tf

−

18

0.8

−

mSec

2 KW

B

C

E

Figure 1. Darlington Circuit Schematic

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