STX25NM50N datasheet(5/18 Pages) STMICROELECTRONICS

Part #	STX25NM50N

Description	N-channel 500 V, 0.11 廓, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

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STx25NM50N

Electrical characteristics

5/18

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 250 V, ID = 11 A

RG =4.7 Ω VGS = 10 V

(see Figure 18)

23

75

22

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min Typ. Max Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

22

88

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 22 A, VGS = 0

1.3

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 23)

460

6.9

30

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 22 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 23)

532

8.25

31

ns

µC

A

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