NYC008-6JRLRAG datasheet(2/7 Pages) ONSEMI

Part #	NYC008-6JRLRAG

Description	Sensitive Gate Silicon Controlled Rectifiers

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NYC008−6JG

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Notes 1 and 2)

(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)

VDRM,

VRRM

600

V

On-State RMS Current, (TC = 80°C) 180° Conduction Angles

IT(RMS)

0.8

A

Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C)

ITSM

10

A

Circuit Fusing Consideration, (t = 8.3 ms)

I2t

0.415

A2s

Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)

PGM

0.1

W

Forward Average Gate Power, (TA = 25°C, t = 8.3 ms)

PG(AV)

0.10

W

Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)

IGM

1.0

A

Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)

VGRM

5.0

V

Operating Junction Temperature Range @ Rate VRRM and VDRM

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

2. See ordering information for exact device number options.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,Junction−to−Case

Junction−to−Ambient

RqJC

RqJA

75

200

°C/W

Lead Solder Temperature

(t1/16″ from case, 10 secs max)

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 3)

TC = 25°C

(VD = Rated VDRM and VRRM; RGK = 1 kW)TC = 110°C

IDRM, IRRM

−

10

100

mA

ON CHARACTERISTICS

Peak Forward On−State Voltage*

(ITM = 1.0 A Peak @ TA = 25°C)

VTM

−

1.7

V

Gate Trigger Current (Note 4)

TC = 25°C

(VAK = 7.0 Vdc, RL = 100 W)

IGT

−

200

mA

Holding Current (Note 3)

TC = 25°C

(VAK = 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW)TC = −40°C

IH

−

5.0

10

mA

Latch Current (Note 4)

TC = 25°C

(VAK = 7.0 V, Ig = 200 mA)

TC = −40°C

IL

−

10

15

mA

Gate Trigger Voltage (Note 4)

TC = 25°C

(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C

VGT

−

0.8

1.2

V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(VD = Rated VDRM, Exponential Waveform, RGK = 1 kW,TJ = 110°C)

dV/dt

50

−

V/ms

Critical Rate of Rise of On−State Current

(IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)

di/dt

−

50

A/ms

*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.

3. RGK = 1000 W included in measurement.

4. Does not include RGK in measurement.

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