MBT3906DW1T1G_09 datasheet(3/6 Pages) ONSEMI

Part #	MBT3906DW1T1G

Description	Dual General Purpose Transistor

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MBT3906DW1T1G

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3

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916

Cs < 4 pF*

3 V

275

10 k

Cs < 4 pF*

< 1 ns

+0.5 V

10.6 V

300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2%

t1

0

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

REVERSE BIAS (VOLTS)

2.0

3.0

5.0

7.0

10

1.0

0.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

3000

2000

1000

500

300

200

700

100

50

70

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

1.0

2.0 3.0

5.0 7.0 10

20 30 40

0.2 0.3

0.5 0.7

QT

QA

Cibo

Cobo

TJ = 25°C

TJ = 125°C

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

70

100

200

300

500

50

1.0

2.0 3.0

10

20

70

5

100

Figure 6. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0

30

50

200

10

30

7

20

70

100

200

300

500

50

1.0

2.0 3.0

10

20

70

5

100

5.0 7.0

30

50

200

10

30

7

20

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

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