MMBT2369ALT1G datasheet(2/6 Pages) ONSEMI

Part #	MMBT2369ALT1G

Description	Switching Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT2369LT1G, MMBT2369ALT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

15

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0)

V(BR)CES

40

−

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.5

−

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

ICBO

−

0.4

30

mAdc

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0)

MMBT2369A

ICES

−

0.4

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 10 mAdc, VCE = 1.0 Vdc)

MMBT2369

(IC = 10 mAdc, VCE = 1.0 Vdc)

MMBT2369A

(IC = 10 mAdc, VCE = 0.35 Vdc)

MMBT2369A

(IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C)

MMBT2369A

(IC = 30 mAdc, VCE = 0.4 Vdc)

MMBT2369A

(IC = 100 mAdc, VCE = 2.0 Vdc)

MMBT2369

(IC = 100 mAdc, VCE = 1.0 Vdc)

MMBT2369A

hFE

40

−

40

20

30

20

−

120

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc)

MMBT2369

(IC = 10 mAdc, IB = 1.0 mAdc)

MMBT2369A

(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)

MMBT2369A

(IC = 30 mAdc, IB = 3.0 mAdc)

MMBT2369A

(IC = 100 mAdc, IB = 10 mAdc)

MMBT2369A

VCE(sat)

−

0.25

0.20

0.30

0.25

0.50

Vdc

Base −Emitter Saturation Voltage (Note 3)

(IC = 10 mAdc, IB = 1.0 mAdc)

MMBT2369/A

(IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C)

MMBT2369A

(IC = 30 mAdc, IB = 3.0 mAdc)

MMBT2369A

(IC = 100 mAdc, IB = 10 mAdc)

MMBT2369A

VBE(sat)

0.7

−

0.85

1.02

1.15

1.60

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

4.0

pF

Small Signal Current Gain

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

hfe

5.0

−

SWITCHING CHARACTERISTICS

Storage Time

(IB1 = IB2 = IC = 10 mAdc)

ts

−

5.0

13

ns

Turn−On Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)

ton

−

8.0

12

ns

Turn−Off Time

(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)

toff

−

10

18

ns

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

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