MUN5211DW1T1G_09 datasheet(4/20 Pages) ONSEMI

Part #	MUN5211DW1T1G

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5211DW1T1G Series

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4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 4)

DC Current Gain

MUN5211DW1T1G

(VCE = 10 V, IC = 5.0 mA)

MUN5212DW1T1G

MUN5213DW1T1G

MUN5214DW1T1G

MUN5215DW1T1G

MUN5216DW1T1G

MUN5230DW1T1G

MUN5231DW1T1G

MUN5232DW1T1G

MUN5233DW1T1G

MUN5234DW1T1G

MUN5235DW1T1G

MUN5236DW1T1G

MUN5237DW1T1G

hFE

35

60

80

160

3.0

8.0

15

80

60

100

140

350

5.0

15

30

200

150

140

150

140

−

Collector-Emitter Saturation Voltage

(IC = 10 mA, IB = 0.3 mA)

MUN5211DW1T1G

MUN5212DW1T1G

MUN5213DW1T1G

MUN5214DW1T1G

MUN5235DW1T1G

MUN5236DW1T1G

(IC = 10 mA, IB = 5 mA)

MUN5230DW1T1G

MUN5231DW1T1G

MUN5237DW1T1G

(IC = 10 mA, IB = 1 mA)

MUN5215DW1T1G

MUN5216DW1T1G

MUN5232DW1T1G

MUN5233DW1T1G

MUN5234DW1T1G

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

MUN5211DW1T1G

MUN5212DW1T1G

MUN5214DW1T1G

MUN5215DW1T1G

MUN5216DW1T1G

MUN5230DW1T1G

MUN5231DW1T1G

MUN5232DW1T1G

MUN5233DW1T1G

MUN5234DW1T1G

MUN5235DW1T1G

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

MUN5213DW1T1G

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)

MUN5236DW1T1G

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

MUN5237DW1T1G

VOL

−

0.2

Vdc

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

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MUN5211DW1T1G Datasheet(PDF) 4 Page - ON Semiconductor

MUN5211DW1T1G Datasheet(HTML) 4 Page - ON Semiconductor

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