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VNB14NV04 Datasheet(PDF) 8 Page - STMicroelectronics

Part # VNB14NV04
Description  OMNIFET II fully autoprotected Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNB14NV04 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical specification
VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04
8/31
Doc ID 7393 Rev 8
td(on)
Turn-on delay time
VDD = 15 V Id = 7 A
Vgen = 5 V Rgen = 2.2 KΩ
(see Figure 3)
1.5
4.5
µs
tr
Rise time
9.7
30.0
µs
td(off)
Turn-off delay time
25.0
µs
tf
Fall time
10.2
30.0
µs
(di/dt)on Turn-on current slope
VDD = 15 V ID = 7 A
Vgen = 5 V Rgen = RIN MIN =10 Ω
16
A/µs
Qi
Total input charge
VDD = 12 V ID = 7 A Vin = 5 V;
Igen = 2.13 mA (see Figure 7)
36.8
nC
Source drain diode
VSD
(1)
Forward on voltage
ISD = 7 A Vin = 0 V
0.8
V
trr
Reverse recovery time
ISD = 7 A; di/dt = 40 A/µs
VDD = 30 V L = 200 µH
(see test circuit, Figure 4)
300
ns
Qrr
Reverse recovery charge
0.8
µC
IRRM
Reverse recovery current
5
A
Protection
Ilim
Drain current limit
VIN = 5 V; VDS = 13 V
12
18
24
A
tdlim
Step response current limit
VIN = 5 V; VDS = 13 V
45
µs
Tjsh
Over temperature shutdown
150
175
200
°C
Tjrs
Over temperature reset
135
°C
Igf
Fault sink current
VIN = 5 V; VDS = 13 V; Tj = Tjsh
10
15
20
mA
Eas
Single pulse avalanche energy
starting Tj = 25 °C; VDD = 24 V
VIN = 5 V; Rgen = RIN MIN = 10 Ω;
L = 24 mH (see Figure 5 and
Figure 6)
400
mJ
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 4.
Electrical characteristics (continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit


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