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STPR1620CG Datasheet(PDF) 2 Page - STMicroelectronics |
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STPR1620CG Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 7 page Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) STPR1620CG / STPR1620CT / STPR1620CR 2/7 Symbol Test conditions Min. Typ. Max. Unit IR * Tj = 25°C VR =VRRM 50 µA Tj = 100°C 0.2 0.6 mA VF** Tj = 125 °CIF =8A 0.8 0.99 V Tj = 125 °CIF =16A 0.95 1.20 Tj =25 °CIF =16A 1.25 Pulse test : * tp=5ms, δ <2% ** tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P=0.78xIF(AV) + 0.026 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit trr Tj = 25°C IF = 0.5A IR =1A Irr = 0.25A 30 ns tfr Tj =25 °CIF =3A VFR =1.1xVF max dIF/dt=50A/ µs 20 ns VFP Tj =25 °CIF =3A dIF/dt=50A/ µs 3V RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 3.0 °C/W Total 1.8 °C/W Rth (c) Coupling 0.6 °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES |
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