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SF19 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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SF19 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page SF11 - SF19 SUPER FAST RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Super fast recovery time * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SF11 SF12 SF13 SF14 SF15 SF16 SF17 SF18 SF19 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 800 1000 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A. VF V Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time ( Note 1 ) Trr 35 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 04 : March 25, 2005 RATING 0.95 4.0 1.7 A A IR IFSM IF(AV) 1.0 30 µA 10 5.0 DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) |
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