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UF1003 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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UF1003 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page RM2 - RM2Z SILICON RECTIFIER DIODES PRV : 200 - 1000 Volts Io : 1.2 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RM2Z RM2 RM2A RM2B RM2C UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 1000 V Maximum RMS Voltage VRMS 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 200 400 600 800 1000 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. VF 0.91 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Typical Junction Capacitance (Note1) CJ 30 pF Typical Thermal Resistance (Note2) R θJA 50 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 25, 2005 IFSM 100 A RATING IF 1.2 A D2A 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) * Pb / RoHS Free |
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