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STB12NM50ND Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB12NM50ND
Description  N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB12NM50ND Datasheet(HTML) 3 Page - STMicroelectronics

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STB12NM50ND, STD12NM50ND, STF12NM50ND
Electrical ratings
Doc ID 14936 Rev 2
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK
DPAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
11
11 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
6.9
6.9 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
44
44 (1)
A
PTOT
Total dissipation at TC = 25 °C
100
25
W
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
dv/dt (3)
3.
ISD ≤ 11 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK
DPAK
TO-220FP
Rthj-case Thermal resistance junction-case max
1.25
5
°C/W
Rthj-pcb Thermal resistance junction-pcb max
30
50
°C/W
Rthj-amb Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
5A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
350
mJ


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