TDF8591TH datasheet(10/34 Pages) NXP

Part #	TDF8591TH

Description	2 X 100 W SE (4 OHM) or 1 X 310 W BTL (4 OHM) class-D amplifier

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Manufacturer	NXP [NXP Semiconductors]

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10 / 34 page

TDF8591TH_1

Product data sheet

Rev. 01 — 5 March 2008

10 of 34

NXP Semiconductors

TDF8591TH

2

× 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D ampliﬁer

7.

Limiting values

Input resistors are referred to SGND.

a. Internal circuitry

b. External connections

Fig 8.

Input conﬁguration for mono BTL application

001aad841

IN1P

SGND

IN1M

IN2P

IN2M

Vin

IN1P

OUT1

power stage

mbl466

OUT2

SGND

IN1M

IN2P

IN2M

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDD

supply voltage

VDDP1 and VDDA1 referred to

SGND1; VDDP2 and VDDA2 referred

to SGND2

−0.3

+34

V

VSS

negative supply voltage

VSSP1 and VSSA1 referred to

SGND1; VSSP2 and VSSA2 referred

to SGND2

−34

+0.3

V

VP

supply voltage

−0.3

+66

V

IOSM

non-repetitive peak output current

-

12

A

Tstg

storage temperature

−55

+150

°C

Tamb

ambient temperature

−40

+85

°C

Tj

junction temperature

−40

+150

°C

VBOOT1

voltage on pin BOOT1

referred to OUT1

[1] 014

V

VBOOT2

voltage on pin BOOT2

referred to OUT2

[1] 014

V

VSTABI

voltage on pin STABI

referred to VSSD

[2] -14

V

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