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PUML1 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PUML1 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page PUML1_DG_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 14 July 2008 4 of 12 NXP Semiconductors PUML1/DG 50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 417 K/W FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration 006aab255 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 |
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