PUML1_DG_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 14 July 2008

2 of 12

NXP Semiconductors

PUML1/DG

50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

emitter TR1

2

base TR1

3

output (collector) TR2

4

GND (emitter) TR2

5

input (base) TR2

6

collector TR1

13

2

4

5

6

65

4

12

3

R2

TR1

TR2

R1

006aab253

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PUML1/DG

SC-88

plastic surface-mounted package; 6 leads

SOT363

Table 4.

Marking codes

Type number

Marking code[1]

PUML1/DG

PA*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1 (general-purpose transistor)

collector-base voltage

open emitter

-

60

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

6

V

collector current

-

200

mA

peak collector current

single pulse;

-

200

mA

peak base current

single pulse;

-

100

mA