PESD5V0S1UJ_PESD12VS1UJ_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 3 June 2009

5 of 14

NXP Semiconductors

PESD5V0S1UJ; PESD12VS1UJ

Unidirectional ESD protection for transient voltage suppression

7.

Characteristics

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

Table 10.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

reverse standoff voltage

PESD5V0S1UJ

-

-

5

V

PESD12VS1UJ

-

-

12

V

reverse leakage current

PESD5V0S1UJ

-

0.3

4

µA

PESD12VS1UJ

-

< 1

100

nA

breakdown voltage

PESD5V0S1UJ

6.2

6.8

7.3

V

PESD12VS1UJ

13.3

14.5

15.75

V

diode capacitance

f = 1 MHz;

PESD5V0S1UJ

-

480

530

pF

PESD12VS1UJ

-

160

180

pF

clamping voltage

[1]

PESD5V0S1UJ

--19

V

-

-

13.5

V

-

-

9.8

V

PESD12VS1UJ

-

-

27

V

-

-

23.5

V

--19

V

differential resistance

PESD5V0S1UJ

-

2

100

Ω

PESD12VS1UJ

-

5

100

Ω