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BU941ZP Datasheet(PDF) 3 Page - STMicroelectronics |
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BU941ZP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page BU941ZP BU941ZPFI Electrical characteristics 3/11 2 Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICEO Collector cut-off current (IB = 0) VCE = 300 V VCE = 300 V Tj = 125 °C 100 0.5 µA mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 20 mA VClamp (1) 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%. Clamping voltage IC = 100 mA 350 500 V VCE(sat) (1) Collector-emitter saturation voltage IC = 8 A IB = 100 mA IC = 10 A IB = 250 mA IC = 12 A IB = 300 mA 1.8 1.8 2 V V V VBE(sat) (1) Collector-emitter base voltage IC = 8 A IB = 100 mA IC = 10 A IB = 250 mA IC = 12 A IB = 300 mA 2.2 2.5 2.7 V V V hFE (1) DC current gain IC = 5 A VCE = 10 V 300 Functional test VCC = 24 V L = 7 mH Figure 13. 10 A ts tf Inductive load Storage time Fall time VCC = 12 V L = 7 mH VBE(off) = 0 V RBE = 47 Ω VClamp = 300 V IC = 7 A IB1 = 70 mA 15 0.5 µs µs VF Diode forward voltage IF = 10 A 2.5 V |
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