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BT236X-600 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BT236X-600 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page BT236X_SER_F_G_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 14 March 2006 4 of 12 Philips Semiconductors BT236X series F and G 6 A Four-quadrant triacs tp ≤ 20 ms (1) dIT/dt limit (2) T2 − G+ quadrant Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values f = 50 Hz; Th ≤ 88 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of heatsink temperature; maximum values 003aab308 10 10 2 10 3 10 -5 10 -4 10 -3 10 -2 10 -1 tp ( s) ITSM (A) (1) (2) ITSM t IT Tj(init) = 25 °C max T 003aab309 0 5 10 15 20 25 10 -2 10 -1 1 10 surge duration (s) IT(RMS) (A) 003aab310 0 2 4 6 8 -50 0 50 100 150 Th (°C) IT(RMS) (A) 88 °C |
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