BLF6G20-110_09 datasheet(1/10 Pages) NXP

Part #	BLF6G20-110

Description	Power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product proﬁle

1.1 General description

110 W LDMOS power transistor for base station applications at frequencies from

1800 MHz to 2000 MHz.

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 10 MHz.

1.2 Features

I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,

a supply voltage of 28 V and an IDq of 900 mA:

N Average output power = 25 W

N Power gain = 19 dB

N Efﬁciency = 32 %

N IMD3 = −34 dBc

N ACPR = −38 dBc

I Easy power control

I Integrated ESD protection

I Excellent ruggedness

I High efﬁciency

I Excellent thermal stability

I Designed for broadband operation (1800 MHz to 2000 MHz)

I Internally matched for ease of use

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF6G20-110; BLF6G20LS-110

Power LDMOS transistor

Rev. 03 — 13 January 2009

Product data sheet

Table 1.

Typical performance

RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation

f

VDS

PL(AV)

Gp

η

D

IMD3

ACPR

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

1930 to 1990

28

25

19

32

−34[1]

−38[1]

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

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BLF6G20-110 Datasheet(PDF) 1 Page - NXP Semiconductors

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