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CBTV4020 Datasheet(PDF) 1 Page - NXP Semiconductors |
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CBTV4020 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 16 page 1. General description This 20-bit bus switch is designed for 2.3 V to 2.7 V VDD operation and SSTL_2 select input levels. Each host port pin is multiplexed to one of two DIMM port pins. When the SEL pin is HIGH the A DIMM port is turned on and the B DIMM port is off. The ON-state connects the host port to the DIMM port through a 20 Ω nominal series resistance. When the port is off a high-impedance state exists between the Host and disabled DIMM. The DIMM port is terminated with a 100 Ω resistor to ground. When the SEL pin is LOW the B DIMM port is turned on and the A DIMM port is off. The part incorporates a very low crosstalk design. It has a very low skew between outputs (< 50 ps) and low skew (< 50 ps) for rising and falling edges. The part has optimal performance in DDR data bus applications. Each switch has been optimized for connection to 1-bank or 2-bank DIMMs. The low internal RC time constant of the switch (20 Ω× 7 pF) allows data transfer to be made with minimal propagation delay. The CBTV4020 is characterized for operation from 0 °C to +85 °C. 2. Features I SEL signal is SSTL_2 compatible I Optimized for use in Double Data Rate (DDR) SDRAM applications I Designed to be used with 400 Mbit/s 200 MHz DDR data bus I Switch ON resistance is designed to eliminate the need for series resistor to DDR SDRAM I RON ~20 Ω I Internal 100 Ω pull-down resistors on DIMM side when path is disabled I Low differential skew I Matched rise/fall slew rate I Low crosstalk I One DIMM select control line I Latch-up protection exceeds 500 mA per JESD78 I ESD protection exceeds 1500 V HBM per JESD22-A114, 200 V MM per JESD22-A115 and 1000 V CDM per JESD22-C101 CBTV4020 20-bit DDR SDRAM 2 : 1 MUX Rev. 03 — 4 April 2008 Product data sheet |
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