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PHB108NQ03LT Datasheet(PDF) 7 Page - NXP Semiconductors |
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PHB108NQ03LT Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page 9397 750 14707 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 18 April 2005 7 of 14 Philips Semiconductors PHB/PHD/PHU108NQ03LT N-channel TrenchMOS™ logic level FET ID = 1 mA; VDS =VGS Tj =25 °C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage ID = 25 A; VDS = 12 V and 19 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform definitions 03aa33 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 03aa36 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0123 VGS (V) ID (A) max typ min 03ar64 0 2 4 6 8 10 0 1020 3040 QG (nC) VGS (V) ID = 25 A Tj = 25 °C VDS = 19 V 12 V 003aaa508 VGS VGS(th) Qgs1 Qgs2 Qgd VDS Qg(tot) ID Qgs Vplat |
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