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BCV63 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BCV63 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BCV63_63B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 4 — 4 August 2010 2 of 12 NXP Semiconductors BCV63; BCV63B NPN general-purpose double transistors [1] Group selection will be done on TR1. Due to matched dies, hFE values for TR2 are the same as for TR1. 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Transistor TR2 VCEO collector-emitter voltage open base - - 6 V hFE DC current gain VCE =700 mV; IC =2mA [1] BCV63 110 - 800 BCV63B 200 - 450 Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 collector TR2 and base TR1 2 collector TR1 3 emitter TR1 and TR2 4base TR2 2 1 3 4 006aab228 21 34 TR2 TR1 Table 4. Ordering information Type number Package Name Description Version BCV63 - plastic surface-mounted package; 4 leads SOT143B BCV63B Table 5. Marking codes Type number Marking code[1] BCV63 *D5 BCV63B *D6 |
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Similar Description - BCV63_10 |
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