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HEF4104BT Datasheet(PDF) 4 Page - NXP Semiconductors |
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HEF4104BT Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page HEF4104B_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 16 December 2009 4 of 14 NXP Semiconductors HEF4104B Quad low-to-high voltage translator with 3-state outputs 8. Limiting values [1] IDD is the combined current of IDD(A) and IDD(B). [2] For DIP16 packages: above Tamb = 70 °C, Ptot derates linearly at 12 mW/K. [3] For SO16 packages: above Tamb = 70 °C, Ptot derates linearly at 8 mW/K. 9. Recommended operating conditions Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground). Symbol Parameter Conditions Min Max Unit VDD(A) supply voltage A port A; VDD(A) ≤ VDD(B) −0.5 +18 V VDD(B) supply voltage B port B; VDD(B) ≥ VDD(A) −0.5 +18 V IIK input clamping current VI < −0.5 V or VI >VDD(A) + 0.5 V - ±10 mA VI input voltage −0.5 VDD(A) + 0.5 V IOK output clamping current VO < −0.5 V or VO >VDD(B) + 0.5 V - ±10 mA II/O input/output current - ±10 mA IDD supply current [1] -50 mA Tstg storage temperature −65 +150 °C Tamb ambient temperature −40 +85 °C Ptot total power dissipation Tamb = −40 °C to +85 °C DIP16 [2] - 750 mW SO16 [3] - 500 mW P power dissipation per output - 100 mW Table 5. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit VDD(A) supply voltage A 3 - ≤ V DD(B) V VDD(B) supply voltage B ≥ V DD(A) -15 V VI input voltage 0 - VDD(A) V Tamb ambient temperature in free air −40 - +85 °C Δt/ΔV input transition rise and fall rate VDD(A) = 5 V --3.75 μs/V VDD(A) = 10 V --0.5 μs/V VDD(A) = 15 V --0.08 μs/V |
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