HEF4104BT datasheet(4/14 Pages) NXP

Part #	HEF4104BT

Description	Quad low-to-high voltage translator with 3-state outputs

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Manufacturer	NXP [NXP Semiconductors]

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HEF4104B_7

Product data sheet

Rev. 07 — 16 December 2009

4 of 14

NXP Semiconductors

HEF4104B

Quad low-to-high voltage translator with 3-state outputs

8.

Limiting values

[1]

IDD is the combined current of IDD(A) and IDD(B).

[2]

For DIP16 packages: above Tamb = 70 °C, Ptot derates linearly at 12 mW/K.

[3]

For SO16 packages: above Tamb = 70 °C, Ptot derates linearly at 8 mW/K.

9.

Recommended operating conditions

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).

Symbol

Parameter

Conditions

Min

Max

Unit

VDD(A)

supply voltage A

port A; VDD(A) ≤ VDD(B)

−0.5

+18

V

VDD(B)

supply voltage B

port B; VDD(B) ≥ VDD(A)

−0.5

+18

V

IIK

input clamping current

VI < −0.5 V or VI >VDD(A) + 0.5 V

-

±10

mA

VI

input voltage

−0.5

VDD(A) + 0.5 V

IOK

output clamping current

VO < −0.5 V or VO >VDD(B) + 0.5 V

-

±10

mA

II/O

input/output current

-

±10

mA

IDD

supply current

[1] -50

mA

Tstg

storage temperature

−65

+150

°C

Tamb

ambient temperature

−40

+85

°C

Ptot

total power dissipation

Tamb = −40 °C to +85 °C

DIP16

[2] -

750

mW

SO16

[3] -

500

mW

P

power dissipation

per output

-

100

mW

Table 5.

Recommended operating conditions

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD(A)

supply voltage A

3

-

≤ V

DD(B)

V

VDD(B)

supply voltage B

≥ V

DD(A)

-15

V

VI

input voltage

0

-

VDD(A)

V

Tamb

ambient temperature

in free air

−40

-

+85

°C

Δt/ΔV

input transition rise and fall rate

VDD(A) = 5 V

--3.75

μs/V

VDD(A) = 10 V

--0.5

μs/V

VDD(A) = 15 V

--0.08

μs/V

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