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PBSS303PZ Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBSS303PZ Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 14 page 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −30 V IC collector current - - −5.3 A ICM peak collector current single pulse; tp ≤ 1ms -- −10.6 A RCEsat collector-emitter saturation resistance IC = −4A; IB = −200 mA [1] -36 53 m Ω |
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