PBSS303PZ datasheet(1/14 Pages) NXP

Part #	PBSS303PZ

Description	30 V, 5.3 A PNP low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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1.

Product profile

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS303NZ.

1.2 Features

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

High collector current gain (hFE) at high IC

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

DC-to-DC conversion

MOSFET gate driving

Motor control

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

PBSS303PZ

30 V, 5.3 A PNP low VCEsat (BISS) transistor

Rev. 02 — 20 November 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

−30

V

IC

collector current

-

−5.3

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

--

−10.6

A

RCEsat

collector-emitter

saturation resistance

IC = −4A;

IB = −200 mA

[1] -36

53

m

Ω

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