PBSS303PX datasheet(7/15 Pages) NXP

Part #	PBSS303PX

Description	30 V, 5.1 A PNP low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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7 / 15 page

PBSS303PX_2

Product data sheet

Rev. 02 — 20 November 2009

7 of 15

NXP Semiconductors

PBSS303PX

30 V, 5.1 A PNP low VCEsat (BISS) transistor

VCE = −2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

DC current gain as a function of collector

current; typical values

Fig 6.

Collector current as a function of

collector-emitter voltage; typical values

VCE = −2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

Base-emitter voltage as a function of collector

current; typical values

Fig 8.

Base-emitter saturation voltage as a function

of collector current; typical values

006aaa596

400

600

200

800

1000

hFE

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

(3)

(2)

(1)

006aaa604

VCE (V)

0

−5

−4

−2

−3

−1

−6

−8

−4

−2

−10

−12

−14

IC

(A)

0

−30

−135

−120

−105

−90

−75

−60

−45

−15

IB (mA) =

−150

006aaa597

−0.4

−0.8

−1.2

VBE

(V)

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

(3)

(2)

(1)

006aaa600

−0.4

−0.8

−1.2

VBEsat

(V)

0

IC (mA)

−10−1

−104

−103

−1

−102

−10

(3)

(2)

(1)

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