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PBSS303PX Datasheet(PDF) 7 Page - NXP Semiconductors |
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PBSS303PX Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page PBSS303PX_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 20 November 2009 7 of 15 NXP Semiconductors PBSS303PX 30 V, 5.1 A PNP low VCEsat (BISS) transistor VCE = −2V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Collector current as a function of collector-emitter voltage; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 006aaa596 400 600 200 800 1000 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (3) (2) (1) 006aaa604 VCE (V) 0 −5 −4 −2 −3 −1 −6 −8 −4 −2 −10 −12 −14 IC (A) 0 −30 −135 −120 −105 −90 −75 −60 −45 −15 IB (mA) = −150 006aaa597 −0.4 −0.8 −1.2 VBE (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (3) (2) (1) 006aaa600 −0.4 −0.8 −1.2 VBEsat (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (3) (2) (1) |
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