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BUK952R4-40C Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK952R4-40C Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page BUK952R4-40C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 April 2008 4 of 13 NXP Semiconductors BUK952R4-40C N-channel TrenchMOS logic level FET Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aac266 10 -1 1 10 10 2 10 3 10 -3 10 -2 10 -1 1 10 tAL (ms) IAL (A) (1) (2) (3) (1) Single pulse;T j =25 °C. (2) Single pulse;T j = 150 °C. (3) Repetitive. 003aac271 10 -1 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) ID (A) DC tp = 10 μs 100 μs 1 ms 10 ms 100 ms Limit RDSon = VDS / ID (1) T mb =25 °C; IDM is single pulse (1) Capped at 100 A due to package. |
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