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5962F9563101QXC Datasheet(PDF) 3 Page - Intersil Corporation |
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5962F9563101QXC Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 3 page 3 FN2930.4 August 7, 2008 Die Characteristics DIE DIMENSIONS: 84 mils x 130 mils (2140µm x 3290µm) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorus Silicon Glass) Thickness: 10k Å ±1kÅ Top Metallization: M1: Mo/Tiw Thickness: 5800 Å M2: Al/Si/Cu Thickness: 10k Å ±1kÅ Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: VDD (When Powered Up) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105A/cm2 Transistor Count: 240 Bond Pad Size: 110µm x 100µm Metallization Mask Layout HS-26CT32RH AIN VDD BIN AIN (2) AOUT (3) ENAB (4) COUT (5) CIN (6) (8) (9) (14) BIN (13) BOUT (12) ENAB (11) DOUT (10) DIN (1) (16) (15) (7) CIN GND DIN HS-26CT32RH |
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