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5962F0721801V9A Datasheet(PDF) 1 Page - Intersil Corporation

Part # 5962F0721801V9A
Description  Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

5962F0721801V9A Datasheet(HTML) 1 Page - Intersil Corporation

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Radiation Hardened Ultra High Frequency
NPN/PNP Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH
The ISL73096RH, ISL73127RH and ISL73128RH are
radiation hardened bipolar transistor arrays. The
ISL73096RH consists of three NPN transistors and two
PNP transistors on a common substrate. The
ISL73127RH consists of five NPN transistors on a
common substrate. The ISL73128RH consists of five PNP
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes
provides an immunity to Single Event Latch-up and the
capability of highly reliable performance in any radiation
environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high
frequency amplifier and mixer applications. Monolithic
construction of the NPN and PNP transistors provides the
closest electrical and thermal matching possible. Access
is provided to each terminal of the transistors for
maximum application flexibility.
Specifications for Rad Hard QML devices are
controlled by the Defense Supply Center in
Columbus (DSCC). The SMD numbers listed here
must be used when ordering.
Detailed Electrical Specifications for these
devices are contained in SMD 5962-07218. A
“hot-link” is provided on our website for
downloading.
Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
•Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . 3 x 105RAD(Si)
- SEL Immune . . Bonded Wafer Dielectric Isolation
• NPN Gain Bandwidth Product (FT) . . . 8GHz (Typ)
• NPN Current Gain (hFE). . . . . . . . . . . . 130 (Typ)
•NPN Early Voltage (VA) . . . . . . . . . . . . 50V (Typ)
• PNP Gain Bandwidth Product (FT) . . . 5.5GHz (Typ)
• PNP Current Gain (hFE) . . . . . . . . . . . . . 60 (Typ)
•PNP Early Voltage (VA) . . . . . . . . . . . . 20V (Typ)
•Noise Figure (50Ω) at 1GHz . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage . . . . . . <1pA (Typ)
• Complete Isolation Between Transistors
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note AN1503
• High Frequency Converters
• Synchronous Detector
Ordering Information
ORDERING NUMBER
PART NUMBER
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
5962F0721801V9A
ISL73096RHVX
-55 to +125
DIE
5962F0721801VXC
ISL73096RHVF (Notes 1, 2)
-55 to +125
16 LD FLATPACK
5962F0721802V9A
ISL73127RHVX
-55 to +125
DIE
5962F0721802VXC
ISL73127RHVF (Notes 1, 2)
-55 to +125
16 LD FLATPACK
5962F0721803V9A
ISL73128RHVX
-55 to +125
DIE
5962F0721803VXC
ISL73128RHVF (Notes 1, 2)
-55 to +125
16 LD FLATPACK
ISL73096RHF/PROTO
ISL73096RHF/PROTO
-55 to +125
ISL73096RHX/SAMPLE
ISL73096RHX/SAMPLE
-55 to +125
DIE
ISL73127RHF/PROTO
ISL73127RHF/PROTO
-55 to +125
ISL73127RHX/SAMPLE
ISL73127RHX/SAMPLE
-55 to +125
DIE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2007, 2009. All Rights Reserved
All other trademarks mentioned are the property of their respective owners..
November 12, 2009
FN6475.3


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