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2SJ501 Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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2SJ501 Datasheet(HTML) 3 Page - Sanyo Semicon Device |
3 / 4 page 2SJ501 No.5948–3/4 1ms SW Time - I D A S O P D - Ta VDD=-10V VGS=-4V IDP=- 2A Operation in this area is limited by RDS(on). Ciss,Coss,Crss - VDS VGS - Qg f = 1MHz Ciss Coss Crss VDS=-10V ID=-0.5A td(on) tr tf td (off) 10ms 100 µs ID=- 0.5A 2 3 5 7 10 100 2 3 5 7 1000 0 -4 -2 -6 -10 -8 -14 -12 -18 -16 -20 -1 -2 -3 -4 -5 -10 -9 -8 -7 -6 0 0 1.0 2.0 3.0 4.0 5.0 2 1.0 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 35 7 -0.1 23 23 57 -1.0 2 -0.01 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 -0.01 23 5 7 -0.1 23 5 7 -1.0 23 23 57 -10 020 0.1 0.2 0.3 0.25 0 40 60 80 100 120 140 160 Drain Current, ID –A Drain-to-Source Voltage, VDS –V Ta=25 °C Single pulse Drain-to-Source Voltage, VDS –V Ambient Temperature, Ta – ˚C Total Gate Charge, Qg – nC R DS(on) - Ta VGS=0 ID=-0.3A,V GS =-4V I F - VSD ID=-0.05A,V GS =-2.5V 100 200 1000 900 500 600 700 800 400 300 0 -60 -40 -20 0 20 40 60 80 100 120 160 140 2 3 5 7 -0.001 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 0 -0.2 -0.4 -0.6 -1.0 -0.8 -1.2 -1.4 Diode Forward Voltage, VSD –V Ambient Temperature, Ta – ˚C |
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