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IRGI4090PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGI4090PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRGI4090PbF 2 www.irf.com Notes: Half sine wave with duty cycle = 0.05, PW=2µsec. Rθ is measured at TJ of approximately 90°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVCES Collector-to-Emitter Breakdown Voltage 300 ––– ––– V V(BR)ECS Emitter-to-Collector Breakdown Voltage e 30 ––– ––– V ∆ΒV CES/ ∆T J Breakdown Voltage Temp. Coefficient ––– 0.30 ––– V/°C ––– 1.20 ––– ––– 1.67 1.94 2.43 ––– V ––– 3.35 ––– ––– 4.50 ––– ––– 4.75 ––– VGE(th) Gate Threshold Voltage 2.6 ––– 5.0 V ∆V GE(th)/ ∆T J Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C ICES Collector-to-Emitter Leakage Current ––– 2.0 5.0 µA ––– 5.0 ––– ––– 100 ––– IGES Gate-to-Emitter Forward Leakage ––– ––– 100 nA Gate-to-Emitter Reverse Leakage ––– ––– -100 gfe Forward Transconductance ––– 11 ––– S Qg Total Gate Charge ––– 34 ––– nC Qgc Gate-to-Collector Charge ––– 9.6 ––– td(on) Turn-On delay time ––– 20 ––– IC = 11A, VCC = 240V tr Rise time ––– 14 ––– ns RG = 10 Ω, L=200µH, L S= 150nH td(off) Turn-Off delay time ––– 99 ––– TJ = 25°C tf Fall time ––– 68 ––– td(on) Turn-On delay time ––– 19 ––– IC = 11A, VCC = 240V tr Rise time ––– 15 ––– ns RG = 10 Ω, L=200µH, L S= 150nH td(off) Turn-Off delay time ––– 139 ––– TJ = 150°C tf Fall time ––– 129 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Cies Input Capacitance ––– 1153 ––– Coes Output Capacitance ––– 59 ––– pF Cres Reverse Transfer Capacitance ––– 27 ––– LC Internal Collector Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LE Internal Emitter Inductance ––– 7.5 ––– from package VGE = 15V, ICE = 120A e Static Collector-to-Emitter Voltage VCE(on) VGE = 15V, ICE = 90A, TJ = 150°C e 549 ––– Reference to 25°C VGE = 30V VGE = -30V VCE = 300V, VGE = 0V, TJ = 100°C VCC = 240V, VGE = 15V, RG= 5.1 Ω VCE = VGE, ICE = 250µA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C ––– 637 ––– VCE = 25V, ICE = 11A VCE = 200V, IC = 11A, VGE = 15V e VCC = 240V, RG= 5.10 Ω, T J = 25°C ––– ƒ = 1.0MHz, See Fig.13 and center of die contact Conditions VGE = 0V, ICE = 500µA Reference to 25°C, ICE = 5.0µA VGE = 15V, ICE = 90A e VGE = 15V, ICE = 11A e VGE = 15V, ICE = 30A e VGE = 0V, ICE = 1.0A VGE = 15V, ICE = 60A e VCE = 30V VGE = 0V L =220nH, C= 0.10µF, VGE = 15V L =220nH, C= 0.10µF, VGE = 15V VCC = 240V, RG= 5.10 Ω, T J = 100°C |
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