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IRF7755GPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7755GPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  HEXFET® Power MOSFET 05/14/09 IRF7755GPbF Absolute Maximum Ratings www.irf.com 1 Thermal Resistance Parameter Max. Units VDS Drain-Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.9 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.1 A IDM Pulsed Drain Current -15 PD @TA = 25°C Maximum Power Dissipation 1W PD @TA = 70°C Maximum Power Dissipation 0.64 W Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ±20 V TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C VDSS RDS(on) max ID -20V 51m Ω@VGS = -4.5V - 3.7A 86m Ω@VGS = -2.5V - 2.8A Parameter Max. Units RθJA Maximum Junction-to-Ambient 125 °C/W TSSOP-8 Description l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free l Halogen-Free HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. #Ã2ÃB "Ã2ÃT !Ã2ÃT Ã2Ã9 ! " # $ % & ' $Ã2ÃB! %Ã2ÃT! &Ã2ÃT! 'Ã2Ã9! PD- 96150A |
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