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REJ03B0267-0101 Rev.1.01 Page 94 of 156 Jul 23, 2010 M16C/5M Group, M16C/57 Group 5. Electrical Characteristics J-Version, VCC = 5 V Note: 1. This indicates the memory in which the program to be executed exists. Table 5.16 Electrical Characteristics (2) Topr = −40°C to 85°C unless otherwise specified. Symbol Parameter Measuring Condition Standard Unit Min. Typ. Max. ICC Power Supply Current (VCC = 4.2V to 5.5 V) In single-chip mode, the output pins are open and other pins are VSS High speed mode f(BCLK) = 32 MHz, XIN = 8 MHz (square wave), PLL multiply-by-8 125 kHz on-chip oscillator operates 25 45 mA f(BCLK) = 20 MHz, XIN = 20 MHz (square wave), 125 kHz on-chip oscillator operates 21 39 mA f(BCLK) = 16 MHz, XIN = 16 MHz (square wave), 125 kHz on-chip oscillator operates 17 mA 40 MHz on-chip oscillator mode Main clock stops 40 MHz on-chip oscillator operates 125 kHz on-chip oscillator operates No division 21 39 mA Main clock stops 40 MHz on-chip oscillator operates 125 kHz on-chip oscillator operates Divide-by-8 6mA 125 kHz on-chip oscillator mode Main clock stops 40 MHz on-chip oscillator stops 125 kHz on-chip oscillator operates Divide-by-8 FMR22 = FMR23 = 1 (Low-current consumption read mode) 190 580 μA Low power mode f(BCLK) = 32 kHz On Flash memory (2) FMR22 = FMR23 = 1 (Low-current consumption read mode) 200 μA Wait mode Main clock stops 40 MHz on-chip oscillator stops 125 kHz on-chip oscillator operates Peripheral clock operates Topr = 25°C 25 μA Main clock stops 40 MHz on-chip oscillator stops 125 kHz on-chip oscillator operates Peripheral clock operates Topr = 85°C 55 μA Stop mode Topr = 25°C 315 μA Topr = 85°C 30 μA During flash memory program f(BCLK) = 10 MHz, PM17 = 1 (one wait) VCC = 5.0 V 20.0 mA During flash memory erase f(BCLK) = 10 MHz, PM17 = 1 (one wait) VCC = 5.0 V 30.0 mA Idet2 Low Voltage Detection Dissipation Current 3 μA Idet0 Reset Area Detection Dissipation Current 6 μA |
