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B58600D8010A014 Datasheet(PDF) 5 Page - EPCOS

Part # B58600D8010A014
Description  Pressure sensors
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Manufacturer  EPCOS [EPCOS]
Direct Link  http://www.epcos.com
Logo EPCOS - EPCOS

B58600D8010A014 Datasheet(HTML) 5 Page - EPCOS

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Pressure sensors
C28 series
Absolute pressure sensor die
AS SEN PD
2009-08-03
Please read
Cautions and warnings and
Page 5 of 8
Important notes at the end of this document.
Symbols and Terms
1)
Maximum power supply VDD
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
2)
Operating temperature range Ta
This is the operating Temperature range Ta,min to Ta,max. Because most of the sensor parameters depend on assembling
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted on a TO39 base are tested over a
reduced measuring temperature range of Tmeas,min to Tmeas,max.
3)
Storage temperature range Tst
If the pressure sensor dies are stored in the temperature range Tst,min to Tst,max without applied voltage power supply, this
will not affect the performance of the pressure sensor dies.
4)
Operating pressure range pr
In the operating pressure range 0 to pr,max the pressure sensor die output characteristic is as defined in this specification.
5)
Over pressure pOV
Pressure cycles in the pressure range 0 to pov do not affect the performance of the pressure sensor dies.
6)
Burst pressure pberst
Up to the burst pressure pberst the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
tested at room temperature on wire bonded samples by applying the specified burst pressure for 10 minutes.
The evaluation of this test is done by measuring the bridge resistance or by optical inspection of the diaphragm.
7)
Operating power supply VDD
The pressure sensor parameters are defined for a power supply voltage of VDD = 5 V. In the operating power supply
voltage range VDD,min to VDD,max the ratiometric parameters r(VDD) like sensitivity, offset voltage and the temperature
coefficient of the offset voltage are defined by:
(
)
]
V
[
5
V
])
V
[
5
(
r
V
r
DD
DD =
8)
Total bridge resistance RS
The total bridge resistance is defined between pad X5 and X2, X3 (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
9)
Temperature coefficients of resistance α
α
α
αRs and β
β
β
βRs:
The temperature coefficients of resistance are tested for design verification on samples, mounted on a TO39 base
over a reduced temperature range Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C.
The temperature coefficients of first and second order are defined with the polynomial:
(
)
(
)
°
β
+
°
α
+
°
=
=
2
Rs
Rs
S
S
C
25
T
C
25
T
1
)
C
25
T
(
R
)
T
(
R
The coefficients αRs and βRs are calculated using the three measurement points of Rs(T) at Tmeas,min, TR and Tmeas,max.
10) Offset voltage V
0
The offset voltage V0 is the output voltage Vout(p = 0 bar abs) at zero absolute pressure and for a bridge voltage power
supply VDD = 5 V. Before anodic glass bonding the offset voltage is tested completely on a wafer (wafer level test
measurement) with limits –25 mV< Vo < 25 mV.
For design verification V0 is measured on samples, mounted on a TO39 base by extrapolating the output characteristic
to zero bar. It should be noted that this parameter may be influenced by the assembly.
11) Temperature coefficient of offset voltage TCV
0
The temperature coefficients of offset voltage are defined for a bridge voltage power supply VDD = 5 V.
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on a TO39 base
over a reduced temperature range Tmeas,min = –20 °C to Tmeas,max = 80 °C with TR = 25 °C.
Assuming the offset voltage is mainly due to induce stress TCV0 may be calculated by extrapolating using:
(
) (
)2
2
1
o
2
s
s
0
)
C
25
T
(
v
)
C
25
T
(
v
)
C
25
(
V
)
C
25
T
(
)
C
25
T
(
1
)
T
(
V
°
+
°
+
°
°
β
+
°
α
+
=


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