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SST49LF004B Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST49LF004B Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 36 page  ©2007 Silicon Storage Technology, Inc. S71307-03-EOL 12/07 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation. These specifications are subject to change without notice. EOL Data Sheet FEATURES: • 4 Mbit SuperFlash memory array for code/data storage – SST49LF004B: 512K x8 (4 Mbit) • Conforms to Intel LPC Interface Specification – Supports Single-Byte Firmware Memory Cycle Type • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 64 KByte overlay blocks – Chip-Erase for PP Mode Only • Single 3.0-3.6V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Read Current: 6 mA (typical) – Standby Current: 10 µA (typical) • Fast Sector-Erase/Byte-Program Operation – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 8 seconds (typical) – Single-pulse Program or Erase – Internal timing generation • CMOS and PCI I/O Compatibility • Two Operational Modes – Low Pin Count (LPC) interface mode for in-system operation – Parallel Programming (PP) mode for fast production programming •Low Pin Count (LPC) Interface Mode – LPC bus interface supporting byte Read and Write – 33 MHz clock frequency operation – WP# and TBL# pins provide hardware write protect for entire chip and/or top Boot Block – Block Locking Registers for individual block Write-Lock and Lock-Down protection – JEDEC Standard SDP Command Set – Data# Polling and Toggle Bit for End-of-Write detection – 5 GPI pins for system design flexibility – 4 ID pins for multi-chip selection • Parallel Programming (PP) Mode – 11-pin multiplexed address and 8-pin data I/O interface – Supports fast In-System or PROM programming for manufacturing • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST49LF004B flash memory devices are designed to interface with host controllers (chipsets) that support a low- pin-count (LPC) interface for BIOS applications. The SST49LF004B devices comply with Intel’s LPC Interface Specification, supporting single-byte Firmware Memory cycle type. The SST49LF004B devices are backward compatible to the SST49LF004A Firmware Hub. In this document, FWH mode in the SST49LF004A specification is referenced as the Firmware Memory Read/Write cycle. Two interface modes are supported by the SST49LF004B: LPC mode (Firmware Memory cycle types) for in-system operations and Parallel Programming (PP) mode to interface with pro- gramming equipment. The SST49LF004B flash memory devices are manufac- tured with SST’s proprietary, high-performance SuperFlash technology. The split-gate cell design and thick-oxide tun- neling injector attain greater reliability and manufacturability compared with alternative approaches. The SST49LF004B devices significantly improve performance and reliability, while lowering power consumption. The SST49LF004B devices write (Program or Erase) with a single 3.0-3.6V power supply. The SST49LF004B use less energy during Erase and Pro- gram than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, cur- rent and time of application. Since for any given voltage range the SuperFlash technology uses less current to pro- gram and has a shorter erase time, the total energy con- sumed during any Erase or Program operation is less than alternative flash memory technologies. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. This means the system software or hardware does not have to be calibrated or correlated to the cumulative number of Erase cycles as is necessary with alternative flash memory technologies, whose Erase and Program times increase with accumulated Erase/Pro- gram cycles. 4 Mbit Firmware Hub SST49LF004B SST49LF002B / 003B / 004B4Mb Firmware Hub |
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