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VBP104S Datasheet(PDF) 2 Page - Vishay Siliconix |
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VBP104S Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 2 Rev. 1.2, 20-Apr-10 VBP104S, VBP104SR Vishay Semiconductors Silicon PIN Photodiode BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 50 mA VF 11.3 V Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 V Reverse dark current VR = 10 V, E = 0 Iro 230 nA Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 48 pF VR = 3 V, f = 1 MHz, E = 0 CD 17 40 pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 32 µA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 25 35 µA Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λ p 940 nm Range of spectral bandwidth λ 0.1 430 to 1100 nm Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/ √Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns 20 40 60 80 1 10 100 1000 100 94 8403 V R = 10 V T amb - Ambient Temperature (°C) 0.6 0.8 1.0 1.2 1.4 94 8409 VR =5 V λ = 950 nm 100 80 60 40 20 0 T - Ambient Temperature (°C) amb |
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