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RJK6029DJA Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK6029DJA
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6029DJA Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK6029DJA
Preliminary
REJ03G1895-0100 Rev.1.00
Page 3 of 6
Jun 18, 2010
Main Characteristics
0.8
0.6
0.4
0.2
0
0
48
12
16
20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
0.01
1
0.1
10
100
1
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
23
46
5
0
10
20
30
40
-25
0
50
2575
100 125 150
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
0.10.31
1000
100
10
Reverse Drain Current IDR (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
di / dt = 50 A /
μs
VGS = 0, Ta = 25°C
VGS = 10 V
Pulse Test
ID = 0.4 A
−25°C
Tc = 75
°C
25
°C
VGS = 10 V
Ta = 25
°C
Pulse Test
0.1 A
3.8 V
4.2 V
4.4 V
4.6 V
3.6V
VGS = 3.4 V
4 V
Ta = 25
°C
Pulse Test
Ta = 25
°C
1 shot
Operation in this
area is limited by
RDS(on)
10
μs
5 V
10 V
1
0.1
0.01
0.001
VDS = 10 V
Pulse Test
0.2 A


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