Electronic Components Datasheet Search |
|
RJK2511DPK Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
RJK2511DPK Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page REJ03G1486-0500 Rev.5.00 Page 1 of 6 Jun 30, 2010 Preliminary Datasheet RJK2511DPK Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D S G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V Drain current ID 65 A Drain peak current ID (pulse) Note1 200 A Body-drain diode reverse drain current IDR 65 A Body-drain diode reverse drain peak current IDR (pulse) Note1 200 A Avalanche current IAP Note3 22 A Avalanche energy EAR Note3 30.2 mJ Channel dissipation Pch Note2 200 W Channel to case thermal impedance ch-c 0.625 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C REJ03G1486-0500 Rev.5.00 Jun 30, 2010 |
Similar Part No. - RJK2511DPK_10 |
|
Similar Description - RJK2511DPK_10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |